Toshiba has announced the creation of embedded memory such as SRAM, characterized by low power consumption. According to the manufacturer, the testing of the prototype has shown that power consumption in active mode, decreased by 27% in standby mode - up to 85% compared to existing models. It is expected that this memory will be used in large-scale integrated circuits for smartphones and other mobile devices.
Reduce power consumption managed by special circuits that control the load on the data lines. At low load the chip is cold and consumption in active mode is comparable to the consumption in standby mode. When the load increases (the data is transmitted over active), chip temperature rises, which leads to an increase in leakage current and increase power consumption. Limiting the load increases in the active mode power certain parts of the scheme, we can provide a significant reduction in energy consumption. Another improvement schemes will reduce power consumption in standby mode.
When the development will be found in commercial products, the manufacturer says.
Source: Toshiba
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